Art
J-GLOBAL ID：200902197129354488
Reference number：98A0126072
Behavior of Metal-Induced Oxide Charge during Thermal Oxidation in Silicon Wafers.
シリコンウエハにおける熱酸化中の金属誘導酸化物電荷の挙動
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Author (1)：
Material：
Volume：
144
Issue：
12
Page：
4335-4340
Publication year：
Dec. 1997
JST Material Number：
C0285A
ISSN：
1945-7111
CODEN：
JESOAN
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices
, Oxide thin films
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