Art
J-GLOBAL ID：200902197971637315   Reference number：01A0049948

Anisotropic polarization memory in thermally oxidized porous silicon.

熱酸化多孔質けい素中の異方性のある偏光メモリ
Author (2)：
KOYAMA H

About KOYAMA H

(Hyogo Univ. Teacher Education, Hyogo, JPN)

About Hyogo Univ. Teacher Education, Hyogo, JPN

, 
FAUCHET P M

About FAUCHET P M

(Univ. Rochester, New York)

About Univ. Rochester, New York


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 77  Issue： 15  Page： 2316-2318  Publication year： Oct. 09, 2000 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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thermal oxidation

About thermal oxidation

,...
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anodic oxidation

About anodic oxidation


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Luminescence of semiconductors 
(BM08092S)

About Luminescence of semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
熱酸化

About 熱酸化

, 
多孔質けい素

About 多孔質けい素

, 
異方性

About 異方性

, 
偏光

About 偏光


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