The Temperature Dependence of 1.3- and 1.5-μm Compressively Strained InGaAs(P) MQW Semiconductor Lasers.

PHILLIPS A F; SWEENEY S J; ADAMS A R; THIJS P J A

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J-GLOBAL ID：200902198310021861 Reference number：99A0976949

The Temperature Dependence of 1.3- and 1.5-μm Compressively Strained InGaAs(P) MQW Semiconductor Lasers.

1.3と1.5μmの圧縮歪InGaAs(P) MQW半導体レーザの温度依存性

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Volume： 5 Issue： 3 Page： 401-412 Publication year： May. 1999
JST Material Number： W0734A ISSN： 1077-260X CODEN： IJSQEN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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