Art
J-GLOBAL ID:200902198405237403   Reference number:95A0663509

The effects of surface stress relaxation on electron channelling contrast images of dislocations.

転位の電子チャネリングコントラスト像に対する表面応力緩和の影響
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Volume: 72  Issue:Page: 81-103  Publication year: Jul. 1995 
JST Material Number: E0753B  ISSN: 0141-8610  CODEN: PMAADG  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Lattice defects in semiconductors  ,  Channelling,blocking,energy loss of particles 
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