Art
J-GLOBAL ID：200902198567792540   Reference number：96A0283540

Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface.

粗い多結晶シリコン表面上に形成した酸化物窒化物酸化物膜の伝導機構
Author (2)：
MATSUO N

About MATSUO N

(Kyoto Univ., Kyoto, JPN)

About Kyoto Univ., Kyoto, JPN

, 
SASAKI A

About SASAKI A

(Kyoto Univ., Kyoto, JPN)

About Kyoto Univ., Kyoto, JPN


Material：
Solid-State Electronics  (Solid-State Electron)

About Solid-State Electronics


Volume： 39  Issue： 3  Page： 337-342  Publication year： Mar. 1996 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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polycrystal

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Electric conduction in semiconductors and insulators in general 
(BM03041P)

About Electric conduction in semiconductors and insulators in general

,  Materials of solid-state devices 
(NC03020K)

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Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
多結晶シリコン

About 多結晶シリコン

, 
酸化物

About 酸化物

, 
窒化物

About 窒化物

, 
酸化物膜

About 酸化物膜

, 
伝導

About 伝導


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