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J-GLOBAL ID:200902198568892476   Reference number:97A0514794

Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures.

階段型および傾斜型ヘテロ構造のAlGaN/GaN/SiCにおける移動度の増加
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Volume: 70  Issue: 19  Page: 2583-2585  Publication year: May. 12, 1997 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor-semiconductor contacts with Gr.13-15 element compounds 

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