Art

J-GLOBAL ID：200902200103491356   Reference number：08A0478908

Ultrahigh electron mobility in suspended graphene

空中に浮かせたグラフェンの高速電子移動度

Author (11)： BOLOTIN K.i. (Dep. of Physics, Columbia Univ., New York, NY 10027, USA) ,  SIKES K.j. (Dep. of Applied Physics, Columbia Univ., New York, NY 10027, USA) ,  JIANG Z. (Dep. of Physics, Columbia Univ., New York, NY 10027, USA) ,  JIANG Z. (National High Magnetic Field Lab., Tallahassee, FL 32310, USA) ,  KLIMA M. (Dep. of Mechanical Engineering, Columbia Univ., New York, NY 10027, USA) ,  FUDENBERG G. (Dep. of Physics, Columbia Univ., New York, NY 10027, USA) ,  HONE J. (Dep. of Mechanical Engineering, Columbia Univ., New York, NY 10027, USA) ,  KIM P. (Dep. of Physics, Columbia Univ., New York, NY 10027, USA) ,  STORMER H.l. (Dep. of Physics, Columbia Univ., New York, NY 10027, USA) ,  STORMER H.l. (Dep. of Applied Physics, Columbia Univ., New York, NY 10027, USA) ,  STORMER H.l. (Bell Labs, Alcatel-Lucent Technologies, Murray Hill, NJ 07974, USA)
Material： Solid State Communications  (Solid State Commun)
Volume： 146  Issue： 9-10  Page： 351-355  Publication year： Jun. 2008 
JST Material Number： H0499A  ISSN： 0038-1098  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *Graphite ,  semiconductor thin film ,  low dimensional system ,  two dimension ,  annealing (heat treatment) ,  *Hall mobility ,  concentration dependence ,  Shubnikov-de Haas effect ,  electron microscopy ,  scanning electron microscope ,  atomic force microscope ,  *carrier mobility ,  *graphene

JST classification (1)： Electric conduction in crystalline semiconductors  (BM03043X)

Terms in the title (2)： グラフェン ,  電子移動度