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J-GLOBAL ID：200902200296756530   Reference number：06A0746158

対消滅機構に基づく貫通転位密度分布を有するInSb/GaAs(001)のX線回折

Author (3)：
TAKITA HAYATO

About TAKITA HAYATO

(北陸先端大 ナノセ)

About 北陸先端大 ナノセ

, 
SATO TAKU

About SATO TAKU

(北陸先端大 ナノセ)

About 北陸先端大 ナノセ

, 
SUZUKI TOSHIKAZU

About SUZUKI TOSHIKAZU

(北陸先端大 ナノセ)

About 北陸先端大 ナノセ


Material：
応用物理学会学術講演会講演予稿集  (Extended Abstracts. Annual Meeting. Japan Society of Applied Physics)

About 応用物理学会学術講演会講演予稿集


Volume： 67th  Issue： 1  Page： 290  Publication year： Aug. 29, 2006 
JST Material Number： Y0055A  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*indium antimonide

About indium antimonide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
対消滅

About 対消滅

, 
貫通転位密度

About 貫通転位密度

, 
分布

About 分布

, 
InSb

About InSb

, 
GaAs

About GaAs

, 
X線回折

About X線回折


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