Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses

BAEK I G; LEE M S; SEO S; LEE M J; SEO D H; SUH D-S; PARK S O; KIM H S; CHUNG U-I

Art

J-GLOBAL ID：200902200487652602 Reference number：05A0154215

Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses

非対称単極性電圧パルスで駆動される簡単な二元酸化物を用いた高度スケーラブル不揮発性抵抗性メモリ

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Material：
Volume： 2004 Page： 587-590 Publication year： 2004
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Memory units , Semiconductor integrated circuit , Oxide thin films

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