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J-GLOBAL ID:200902200487652602   Reference number:05A0154215

Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses

非対称単極性電圧パルスで駆動される簡単な二元酸化物を用いた高度スケーラブル不揮発性抵抗性メモリ
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Material:
Volume: 2004  Page: 587-590  Publication year: 2004 
JST Material Number: C0829B  ISSN: 0163-1918  Document type: Proceedings
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Category name(code) classified by JST.
Memory units  ,  Semiconductor integrated circuit  ,  Oxide thin films 

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