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J-GLOBAL ID：200902200813835062
Reference number：05A0969213
Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
薄膜結晶シリコン太陽電池におけるほう素ドープp型水素化非晶質シリコンと結晶シリコンのヘテロ接合における背面電場の効果
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Author (3)：
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Material：
Volume：
44
Issue：
10
Page：
7332-7339
Publication year：
Oct. 15, 2005
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Solar cell
Reference (28)：
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1) R. Brendel: Thin-film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, 2003) p. 99.
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2) T. Sawada, N. Terada, S. Tsuge, T. Baba, T. Takahama, K. Wakisaka, S. Tsuda and S. Nakano: Proc. 1994 IEEE 1st World Conf. Photovoltaic Energy Conversion (IEEE, Piscataway, 1994) p. 1219.
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3) See, for example, Hydrogen in Semiconductors, eds. J. I. Pankove and N. M. Johnson, (Academic Press, San Diego, 1991) Semiconductors and Semimetals Vol. 34, p. 35.
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4) R. Shimokawa, M. Yamanaka and I. Sakata: Proc. 3rd World Conf. & Exhib. Photovoltaic Solar Energy Conversion (2003) p. 1198.
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5) M. Green: High Efficiency Silicon Solar Cells (Trans Tech Publications, Aedermannsdorf, 1987) p. 61.
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