Art

J-GLOBAL ID：200902201009225614   Reference number：06A0510640

Reduction in double-positioning boundaries in 3C-SiC epitaxial films fabricated on Si (111) substrates

Si(111)基板上に作製した3C-SiCエピタキシャル膜の二重位置決め境界の削減

Author (4)： KUSUMORI Takeshi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Chubu 2266-98 Anagahora, Shimoshidami, Moriyama-ku ...) ,  MUTO Hachizo (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Chubu 2266-98 Anagahora, Shimoshidami, Moriyama-ku ...) ,  OKADA Masahisa (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Chubu 2266-98 Anagahora, Shimoshidami, Moriyama-ku ...) ,  JIN Ping (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Chubu 2266-98 Anagahora, Shimoshidami, Moriyama-ku ...)
Material： Thin Solid Films
Volume： 513  Issue： 1-2  Page： 307-310  Publication year： Aug. 14, 2006 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,...

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JST classification (2)： Semiconductor thin films  (BK14040E) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (5)： Si ,  作製 ,  3C-SiC ,  エピタキシャル膜 ,  境界