Art

J-GLOBAL ID：200902201791244886   Reference number：09A1288924

Influence of film composition in Co₂MnSi electrodes on tunnel magnetoresistance characteristics of Co₂MnSi/MgO/Co₂MnSi magnetic tunnel junctions

Co₂MnSi/MgO/Co₂MnSi磁気トンネル接合のトンネル磁気抵抗効果特性に及ぼすCo₂MnSi電極での薄膜組成の影響

Author (6)： ISHIKAWA Takayuki (Div. of Electronics for Informatics, Hokkaido Univ., Sapporo 060-0814, JPN) ,  LIU Hong-xi (Div. of Electronics for Informatics, Hokkaido Univ., Sapporo 060-0814, JPN) ,  TAIRA Tomoyuki (Div. of Electronics for Informatics, Hokkaido Univ., Sapporo 060-0814, JPN) ,  MATSUDA Ken-ichi (Div. of Electronics for Informatics, Hokkaido Univ., Sapporo 060-0814, JPN) ,  UEMURA Tetsuya (Div. of Electronics for Informatics, Hokkaido Univ., Sapporo 060-0814, JPN) ,  YAMAMOTO Masafumi (Div. of Electronics for Informatics, Hokkaido Univ., Sapporo 060-0814, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 95  Issue： 23  Page： 232512  Publication year： Dec. 07, 2009 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *tunnel junction ,  compound semiconductor ,  cobalt base alloy ,  manganese containing alloy ,  silicon containing alloy ,  intermetallic compound ,  magnesium oxide ,  dielectric thin film ,  *magnetoresistance effect ,  SIS structure ,  electrode ,  stoichiometry ,  epitaxy
Semi thesaurus term： *tunneling magnetoresistance effect ,  *magnetic tunnel junction

JST classification (1)： Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (4)： MgO ,  磁気トンネル接合 ,  トンネル磁気抵抗効果 ,  膜組成