Art

J-GLOBAL ID：200902202198088262   Reference number：08A1026157

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

2.95eVバンドギャップを有する高量子効率InGaN/GaN太陽電池

Author (6)： NEUFELD Carl J. (Dep. of Electrical and Computer Engineering, Univ. of California at Santa Barbara, Santa Barbara, California 93106, USA) ,  TOLEDO Nikholas G. (Dep. of Electrical and Computer Engineering, Univ. of California at Santa Barbara, Santa Barbara, California 93106, USA) ,  CRUZ Samantha C. (Materials Dep., Univ. of California at Santa Barbara, Santa Barbara, California 93106, USA) ,  IZA Michael (Materials Dep., Univ. of California at Santa Barbara, Santa Barbara, California 93106, USA) ,  DENBAARS Steven P. (Materials Dep., Univ. of California at Santa Barbara, Santa Barbara, California 93106, USA) ,  MISHRA Umesh K. (Dep. of Electrical and Computer Engineering, Univ. of California at Santa Barbara, Santa Barbara, California 93106, USA)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 93  Issue： 14  Page： 143502  Publication year： Oct. 06, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *solar cell ,  *heterojunction ,  indium compound ,  gallium compound ,  nitride ,  *gallium nitride ,  compound semiconductor ,  semiconductor thin film ,  *sapphire ,  substrate(plate) ,  MOCVD ,  buffer layer ,  imaging characteristic
Semi thesaurus term： *photovoltaic cell ,  *gallium indium nitride ,  metalorganicchemicalvapourdeposition ,  fill factor ,  short circuit current ,  OCV ,  external quantum efficiency

JST classification (2)： Solar cell  (NC03084O) ,  Semiconductor thin films  (BK14040E)

Terms in the title (5)： バンドギャップ ,  量子効率 ,  InGaN ,  GaN ,  太陽電池