Art
J-GLOBAL ID：200902202320832660   Reference number：03A0516264

Nonradiative electron-hole recombination in ZnSSe epitaxial layers examined by piezoelectric photothermal spectroscopy

圧電光熱分光法で調べたZnSSeエピタキシャル層中の非発光電子-正孔再結合
Author (4)：
YOSHINO K

About YOSHINO K

(Miyazaki Univ., Miyazaki, JPN)

About Miyazaki Univ., Miyazaki, JPN

, 
MEMON A

About MEMON A

(Miyazaki Univ., Miyazaki, JPN)

About Miyazaki Univ., Miyazaki, JPN

, 
YONETA M

About YONETA M

(Okayama Univ. Sci., Okayama, JPN)

About Okayama Univ. Sci., Okayama, JPN

, 
ANDO K

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(Tottori Univ., Tottori, JPN)

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Material：
Journal of Materials Science. Materials in Electronics  (J Mater Sci Mater Electron)

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Volume： 14  Issue： 5/7  Page： 421-425  Publication year： May. 2003 
JST Material Number： W0003A  ISSN： 0957-4522  CODEN： JMTSAS  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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carrier recombination

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,...
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Materials of solid-state devices 
(NC03020K)

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Terms in the title (4)：
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圧電

About 圧電

, 
光熱分光法

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, 
エピタキシャル層

About エピタキシャル層

, 
電子-正孔再結合

About 電子-正孔再結合


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