Gd Doping Improved Resistive Switching Characteristics of TiO<sub>2</sub>-Based Resistive Memory Devices

LIU Li-Feng; KANG Jin-Feng; XU Nuo; SUN Xiao; CHEN Chen; SUN Bing; WANG Yi; LIU Xiao-Yan; ZHANG Xing; HAN Ru-Qi

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J-GLOBAL ID：200902202777131137 Reference number：08A0557560

Gd Doping Improved Resistive Switching Characteristics of TiO₂-Based Resistive Memory Devices

TiO₂ベ-スの抵抗メモリ素子のGdドーピングによる抵抗スイッチング特性の改善

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Material：
Volume： 47 Issue： 4 Issue 2 Page： 2701-2703 Publication year： Apr. 25, 2008
JST Material Number： G0520B ISSN： 0021-4922 CODEN： JJAPB6 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Semiconductor integrated circuit

Reference (12)：

I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo. D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon: IEDM Tech. Dig., 2004, p. 587.
Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shim, H. Akinaga, H. Takagi. H. Akoh, and Y. Tokura: IEDM Tech. Dig., 2006, p. 793.
C. Rohde, B. J. Choi, D. S. Jeong, S. Chi, J.-S. Zhao, and C. S. Hwang: Appl. Phys. Lett.86(2005)262907.
S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park: Appl. Phys. Lett.85(2004)5655.
D. Choi, D. Lee, H. Sim, M. Chang, and H. Hwang: Appl. Phys. Lett.88(2006)082904.

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Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

Gd Doping Improved Resistive Switching Characteristics of TiO₂-Based Resistive Memory Devices