Effect of surface NH<sub>3</sub> anneal on the physical and electrical properties of HfO<sub>2</sub> films on Ge substrate

WU N; ZHANG Q; ZHU C; YEO C C; CHIN A; KWONG D-L; DU A Y; TUNG C H; BALASUBRAMANIAN N

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J-GLOBAL ID：200902205419305068 Reference number：04A0402798

Effect of surface NH₃ anneal on the physical and electrical properties of HfO₂ films on Ge substrate

Ge基板上HfO₂膜の物理的,電気的性質に及ぼすNH₃表面熱処理の効果

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Material：
Volume： 84 Issue： 19 Page： 3741-3743 Publication year： May. 10, 2004
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Metal-insulator-semiconductor structures

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Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Effect of surface NH₃ anneal on the physical and electrical properties of HfO₂ films on Ge substrate