Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

YAMAMOTO Shuu'ichirou; YAMAMOTO Shuu'ichirou; SUGAHARA Satoshi; SUGAHARA Satoshi

Art

J-GLOBAL ID：200902206039750340 Reference number：09A0458447

Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

電流誘起磁化スイッチングアーキテクチャを有する磁気トンネル接合を用いた不揮発性静的ランダムアクセスメモリ

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Material：
Volume： 48 Issue： 4,Issue 1 Page： 043001.1-043001.7 Publication year： Apr. 25, 2009
JST Material Number： G0520B ISSN： 0021-4922 CODEN： JJAPB6 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Memory units , Electric conduction in semiconductors and insulators in general , Electrical properties of interfaces in general , Magnetic properties in general

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