Art

J-GLOBAL ID：200902206162148108   Reference number：08A0155209

Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

金属-ゲルマニウム-金属光検出器(MGM-PD)へのドーパント偏析の応用とその暗電流抑制機構

Author (8)： ZANG H. (Inst. of Microelectronics, A*STAR, 11 Sci. Park Road, Singapore 117685 Singapore) ,  LEE S. J. (Silicon Nano Devices Lab., ECE Dep., National Univ. of Singapore, Singapore 117576, SGP) ,  LOH W. Y. (Inst. of Microelectronics, A*STAR, 11 Sci. Park Road, Singapore 117685 Singapore) ,  WANG J. (Inst. of Microelectronics, A*STAR, 11 Sci. Park Road, Singapore 117685 Singapore) ,  YU M. B. (Inst. of Microelectronics, A*STAR, 11 Sci. Park Road, Singapore 117685 Singapore) ,  LO G. Q. (Inst. of Microelectronics, A*STAR, 11 Sci. Park Road, Singapore 117685 Singapore) ,  KWONG D. L. (Inst. of Microelectronics, A*STAR, 11 Sci. Park Road, Singapore 117685 Singapore) ,  CHO B. J. (Silicon Nano Devices Lab., ECE Dep., National Univ. of Singapore, Singapore 117576, SGP)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 92  Issue： 5  Page： 051110  Publication year： Feb. 04, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： Germanium ,  *dopant ,  segregation (concentration distribution) ,  *dark current ,  *photodetector ,  N-type semiconductor ,  P-type semiconductor ,  Schottky barrier

JST classification (1)： Photometry and photodetectors in general  (BD07031F)

Terms in the title (6)： ゲルマニウム ,  光検出器 ,  Pd ,  ドーパント偏析 ,  応用 ,  暗電流