Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application

LIM S H; RASTOGI A C; DESU S B

Art

J-GLOBAL ID：200902207535408152 Reference number：04A0874765

Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application

不揮発性ランダムアクセスメモリへ適用するための強誘電性ふっ化ポリビニリデン重合体膜ゲートをベースにした金属-強誘電体-絶縁体-半導体構造の電気特性

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=04A0874765&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0874765&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (3)： , ,
Material：
Volume： 96 Issue： 10 Page： 5673-5682 Publication year： Nov. 15, 2004
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0874765&from=J-GLOBAL&jstjournalNo=C0266A") }}

Metal-insulator-semiconductor structures , Semiconductor integrated circuit

, , , , , , ,

Return to Previous Page