Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline γ-Al<sub>2</sub>O<sub>3</sub> films as the gate dielectrics

OKADA T; SAWADA K; ISHIDA M; SHAHJAHAN M

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J-GLOBAL ID：200902208945452180 Reference number：04A0907055

Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline γ-Al₂O₃ films as the gate dielectrics

結晶性γ-Al₂O₃膜をゲート絶縁体に用いた金属-酸化物-半導体電界効果トランジスタの作製

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Material：
Volume： 85 Issue： 21 Page： 5004-5006 Publication year： Nov. 22, 2004
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

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Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline γ-Al2O3 films as the gate dielectrics

Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline γ-Al₂O₃ films as the gate dielectrics