Art

J-GLOBAL ID：200902209325308077   Reference number：06A0156916

In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries

異なった表面組成のInNのプラズマ支援分子ビームエピタクシーにおけるその場分光偏光解析法

Author (6)： YOSHITANI Masayoshi (Dep. of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a ...) ,  AKASAKA Koichiro (Dep. of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a ...) ,  WANG Xinqiang (Dep. of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a ...) ,  CHE Song-bek (Dep. of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a ...) ,  ISHITANI Yoshihiro (Dep. of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a ...) ,  YOSHIKAWA Akihiko (Dep. of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 99  Issue： 4  Page： 044913-044913-6  Publication year： Feb. 15, 2006 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *MBE growth ,...
Semi thesaurus term： 擬誘電関数

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JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： 表面組成 ,  InN ,  プラズマ ,  支援 ,  分子ビームエピタクシー ,  分光偏光解析法