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Art
J-GLOBAL ID:200902209325308077   Reference number:06A0156916

In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries

異なった表面組成のInNのプラズマ支援分子ビームエピタクシーにおけるその場分光偏光解析法
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Volume: 99  Issue:Page: 044913-044913-6  Publication year: Feb. 15, 2006
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films 
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