Art
J-GLOBAL ID:200902209417477762   Reference number:04A0421543

High-Precision Analysis of Oxygen Depth Profile in 16O+-Implanted Silicon Substrates by Spectroscopic Ellipsometry

分光偏光解析法による16O+-注入シリコン基板内の酸素深さプロフィルの高精度分析
Author (4):
Material:
Volume: 151  Issue:Page: G373-G376  Publication year: 2004 
JST Material Number: C0285A  ISSN: 1945-7111  CODEN: JESOAN  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0421543&from=J-GLOBAL&jstjournalNo=C0285A") }}
JST classification (4):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Solid-gos interface in general.  ,  Inorganic compounds and elements in general  ,  Materials of solid-state devices 

Return to Previous Page