Art
J-GLOBAL ID：200902209616176364   Reference number：04A0879404

Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

カーボンナノチューブ電界効果トランジスタにおけるバンド間トンネリング
Author (4)：
APPENZELLER J

About APPENZELLER J

(IBM T.J. Watson Res. Center, New York, USA)

About IBM T.J. Watson Res. Center, New York, USA

, 
LIN Y-M

About LIN Y-M

(IBM T.J. Watson Res. Center, New York, USA)

About IBM T.J. Watson Res. Center, New York, USA

, 
KNOCH J

About KNOCH J

(Forschungszentrum Juelich, Juelich, DEU)

About Forschungszentrum Juelich, Juelich, DEU

, 
AVOURIS P

About AVOURIS P

(IBM T.J. Watson Res. Center, New York, USA)

About IBM T.J. Watson Res. Center, New York, USA


Material：
Physical Review Letters  (Phys Rev Lett)

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Volume： 93  Issue： 19  Page： 196805.1-196805.4  Publication year： Nov. 05, 2004 
JST Material Number： H0070A  ISSN： 0031-9007  CODEN： PRLTAO  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*nanotube

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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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valence band

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts without Gr.13-15 element compounds 
(BM03083P)

About Semiconductor-semiconductor contacts without Gr.13-15 element compounds

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
カーボンナノチューブ電界効果トランジスタ

About カーボンナノチューブ電界効果トランジスタ

, 
バンド間トンネリング

About バンド間トンネリング


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