Art
J-GLOBAL ID：200902209756751458   Reference number：06A0197210

Si/Ge multilayers formed by vacuum evaporation and IBIEC

真空蒸発とIBIECによって形成したSi/Ge多重層
Author (4)：
KAWAKITA K.

About KAWAKITA K.

(Hosei Univ., Tokyo, JPN)

About Hosei Univ., Tokyo, JPN

, 
MOROZUMI K.

About MOROZUMI K.

(Hosei Univ., Tokyo, JPN)

About Hosei Univ., Tokyo, JPN

, 
IIZUKA T.

About IIZUKA T.

(Hosei Univ., Tokyo, JPN)

About Hosei Univ., Tokyo, JPN

, 
YAMAMOTO Y.

About YAMAMOTO Y.

(Hosei Univ., Tokyo, JPN)

About Hosei Univ., Tokyo, JPN


Material：
Report of Research Center of Ion Beam Technology, Hosei University. Supplement  (法政大学イオンビーム工学研究所報告 別冊)

About Report of Research Center of Ion Beam Technology, Hosei University. Supplement


Issue： 24  Page： 21-24  Publication year： Mar. 2006 
JST Material Number： L0263A  ISSN： 0914-2908  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
silicon

About silicon

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=06A0197210&from=J-GLOBAL&jstjournalNo=L0263A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
真空蒸発

About 真空蒸発

, 
Si

About Si

, 
Ge

About Ge

, 
多重層

About 多重層


Return to Previous Page

TOP

BOTTOM