Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode using Carrier Separation

LOH W Y; CHO B J; JOO M S; LI M F; CHAN D S H; MATHEW S; KWONG D-L

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J-GLOBAL ID：200902212500735464 Reference number：04A0094360

Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode using Carrier Separation

キャリア分離法を用いた,金属ゲート電極を有する高-K誘電体中の電荷捕獲と絶縁破壊メカニズムの解析

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Material：
Volume： 2003 Page： 927-930 Publication year： 2003
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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