Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

LEE M L; FITZGERALD E A; BULSARA M T; CURRIE M T; LOCHTEFELD A

Art

J-GLOBAL ID：200902216177479785 Reference number：05A0165099

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

高移動度金属-酸化物-半導体電界効果トランジスタの歪Si,SiGeおよびGeチャネル

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Author (5)： , , , ,
Material：
Volume： 97 Issue： 1 Page： 011101.1-011101.28 Publication year： Jan. 01, 2005
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：文献レビュー Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Metal-insulator-semiconductor structures , Semiconductor thin films

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