Art
J-GLOBAL ID：200902217529681462   Reference number：07A0139319

Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

イオン注入による4H-SiCエピタキシャル層におけるトラップの減少とキャリヤ寿命の改善
Author (2)：
STORASTA Liutauras

About STORASTA Liutauras

(Central Res. Inst. of Electric Power Ind., 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, JPN)

About Central Res. Inst. of Electric Power Ind., 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, JPN

, 
TSUCHIDA Hidekazu

About TSUCHIDA Hidekazu

(Central Res. Inst. of Electric Power Ind., 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, JPN)

About Central Res. Inst. of Electric Power Ind., 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, JPN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 90  Issue： 6  Page： 062116-062116-3  Publication year： Feb. 05, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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compound semiconductor

About compound semiconductor

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

,  Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
イオン注入

About イオン注入

, 
4H-SiC

About 4H-SiC

, 
エピタキシャル層

About エピタキシャル層

, 
トラップ

About トラップ

, 
キャリヤ寿命

About キャリヤ寿命


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