531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates

ENYA Yohei; YOSHIZUMI Yusuke; KYONO Takashi; AKITA Katsushi; UENO Masaki; ADACHI Masahiro; SUMITOMO Takamichi; TOKUYAMA Shinji; IKEGAMI Takatoshi; KATAYAMA Koji; NAKAMURA Takao

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J-GLOBAL ID：200902218428703216 Reference number：09A0914344

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates

半極性{2021}自立GaN基板上のInGaN系レーザダイオードの531nm緑色レーザ放射

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Material：
Volume： 2 Issue： 8 Page： 082101.1-082101.3 Publication year： Aug. 25, 2009
JST Material Number： F0599C ISSN： 1882-0778 CODEN： APEPC4 Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Semiconductor lasers

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MIYOSHI, T. Proc. SPIE. 2008, 6894, 689414
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MIYOSHI, T. Appl. Phys. Express. 2009, 2, 062201
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531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20<span style=text-decoration:overline>2</span>1} Free-Standing GaN Substrates