Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

AUCIELLO O; FAN W; KABIUS B; SAHA S; CARLISLE J A; CHANG R P H; LOPEZ C; IRENE E A; BARAGIOLA R A

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J-GLOBAL ID：200902218552265316 Reference number：05A0230158

Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

次世代相補金属-酸化物-半導体デバイス用の代替高kゲート絶縁体としてのハイブリッドチタン-アルミニウム酸化物層

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Material：
Volume： 86 Issue： 4 Page： 042904.1-042904.3 Publication year： Jan. 24, 2005
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Transistors

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