Deep level transient spectroscopy of vertically stacked InAs/Al<sub>0.5</sub>Ga<sub>0.5</sub>As self-assembled quantum dots

LI S; KOIKE K; SASA S; INOUE M; YANO M; JIN Y

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J-GLOBAL ID：200902219220020065 Reference number：03A0437157

Deep level transient spectroscopy of vertically stacked InAs/Al_0.5Ga_0.5As self-assembled quantum dots

垂直に積層したInAs/Al_0.5Ga_0.5As自己形成量子ドットの深準位過渡分光法

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Volume： 126 Issue： 10 Page： 563-566 Publication year： Jun. 2003
JST Material Number： H0499A ISSN： 0038-1098 Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Electronic structure of crystalline semiconductors

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Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots

Deep level transient spectroscopy of vertically stacked InAs/Al_0.5Ga_0.5As self-assembled quantum dots