Art
J-GLOBAL ID：200902219781461451   Reference number：09A0311466

GaN Photonic-Crystal Surface-Emitting Laser

GaNから成るフォトニック結晶を基本とする面発光レーザ
Author (1)：
NODA Susumu

About NODA Susumu

(Kyoto Univ., Kyoto, JPN)

About Kyoto Univ., Kyoto, JPN


Material：
Conference Proceedings. IEEE LEOS Annual Meeting (IEEE Lasers and Electro-Optics Society)  (Lasers and Electro-Optics Society Annual Meeting Conference Proceedings)

About Conference Proceedings. IEEE LEOS Annual Meeting (IEEE Lasers and Electro-Optics Society)


Volume： 2008 Vol.1  Page： 263  Publication year： 2008 
JST Material Number： T0931A  ISSN： 1092-8081  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
gallium nitride

About gallium nitride

, 
compound semiconductor

About compound semiconductor

, 
*surface emitting laser

About surface emitting laser

, 
longitudinal mode

About longitudinal mode

, 
transverse mode

About transverse mode

, 
polarized light

About polarized light

, 
*photonic crystal

About photonic crystal

, 
surface emitting

About surface emitting


JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers 
(BD04070L)

About Semiconductor lasers

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
フォトニック結晶

About フォトニック結晶

, 
面発光レーザ

About 面発光レーザ


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