Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate

SAKATA I.; YAMANAKA M.

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J-GLOBAL ID：200902220374994494 Reference number：05A0644091

Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate

ポストトランシット光電流分光法による水素化非晶質シリコン中のギャップ準位のエネルギー分布酸化インジウムスズ/酸化けい素二層ゲートの妥当性

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Volume： 97 Issue： 10,Pt.1 Page： 103707.1-103707.6 Publication year： May. 15, 2005
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Electronic structure of impurites and defects , Lattice defects in semiconductors

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