Art

J-GLOBAL ID：200902221027675695   Reference number：06A0555103

Structural and compositional analyses of a strained AlGaN/GaN superlattice

歪AlGaN/GaN超格子の構造解析と組成分析

Author (7)： SHIOJIRI M. (Kyoto Inst. of Technol., Kyoto 606-8585, Japan and Dep. of Anatomy, Kanazawa Medical Univ., Ishikawa 920-0293, JPN) ,  CEH M. (Dep. of Nanostructured Materials, Jozef Stefan Inst., 1000 Ljubljana, SVN) ,  STURM S. (Dep. of Nanostructured Materials, Jozef Stefan Inst., 1000 Ljubljana, SVN) ,  CHUO C. C. (Electronics and Optoelectronics Res. Laboratories, Industrial Technol. Res. Inst., Hsinchu, Taiwan 310, Republic of ...) ,  HSU J. T. (Electronics and Optoelectronics Res. Laboratories, Industrial Technol. Res. Inst., Hsinchu, Taiwan 310, Republic of ...) ,  YANG J. R. (Inst. of Materials Sci. and Engineering, National Taiwan Univ., Taipei, Taiwan 106, Republic of China) ,  SAIJO H. (Dep. of Electronics and Information Sci., Kyoto Inst. of Technol., Kyoto 606-8585, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 100  Issue： 1  Page： 013110-013110-7  Publication year： Jul. 01, 2006 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *quantum well laser ,...
Semi thesaurus term： MOVPE

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JST classification (2)： Semiconductor thin films  (BK14040E) ,  Semiconductor lasers  (BD04070L)

Terms in the title (6)： 歪 ,  AlGaN ,  GaN ,  超格子 ,  構造解析 ,  組成分析