Art
J-GLOBAL ID：200902221502368018   Reference number：03A0767586

Thermal Stability of W2N Compound Barrier in W/W2N/poly-Si Gate Electrode Configuration

W/W2N/ポリSiゲート電極構造におけるW2N複合物質障壁の温度安定性
Author (2)：
NOYA A

About NOYA A

(Kitami Inst. of Technol., Kitami-shi, JPN)

About Kitami Inst. of Technol., Kitami-shi, JPN

, 
TAKEYAMA M B

About TAKEYAMA M B

(Kitami Inst. of Technol., Kitami-shi, JPN)

About Kitami Inst. of Technol., Kitami-shi, JPN


Material：
IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Electron (Inst Electron Inf Commun Eng))

About IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)


Volume： E86-C  Issue： 11  Page： 2332-2335  Publication year： Nov. 01, 2003 
JST Material Number： L1370A  ISSN： 0916-8524  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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MOSFET

About MOSFET

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Materials of solid-state devices 
(NC03020K)

About Materials of solid-state devices

Reference (10)：
ｍore...
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
ポリSi

About ポリSi

, 
ゲート電極

About ゲート電極

, 
物質

About 物質

, 
障壁

About 障壁

, 
温度安定性

About 温度安定性


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