Art

J-GLOBAL ID：200902221594368809   Reference number：08A0606568

Optical properties of yellow light-emitting diodes grown on semipolar (1122) bulk GaN substrates

半極性(1122)バルクGaN基板上に成長させた黄色発光ダイオードの光学的性質

Author (11)： SATO Hitoshi (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  CHUNG Roy B. (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  HIRASAWA Hirohiko (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  FELLOWS Natalie (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  MASUI Hisashi (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  WU Feng (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  SAITO Makoto (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  FUJITO Kenji (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  SPECK James S. (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  DENBAARS Steven P. (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA) ,  NAKAMURA Shuji (Materials Dep. and Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106, USA)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 92  Issue： 22  Page： 221110  Publication year： Jun. 02, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *light emitting diode ,  yellow ,  optical property ,  indium compound ,  quantum well ,  *compound semiconductor ,  semiconductor material ,  gallium nitride ,  MOCVD ,  quantum efficiency ,  temperature dependence

JST classification (1)： Light emitting devices  (NC03082G)

Terms in the title (7)： 半極性 ,  バルク ,  GaN ,  成長 ,  黄色 ,  発光ダイオード ,  光学的性質