Art
J-GLOBAL ID：200902223047203520   Reference number：03A0343283

Novel criterion for splitting of plate-like crystal growing in undercooled silicon melts.

過冷溶融シリコンからの板状結晶成長における分裂についての新しい基準
Author (2)：
AOYAMA T

About AOYAMA T

(National Space Dev. Agency of Japan, Ibaraki, JPN)

About National Space Dev. Agency of Japan, Ibaraki, JPN

, 
KURIBAYASHI K

About KURIBAYASHI K

(Inst. Space and Astronautical Sci., Kanagawa, JPN)

About Inst. Space and Astronautical Sci., Kanagawa, JPN


Material：
Acta Materialia  (Acta Mater)

About Acta Materialia


Volume： 51  Issue： 8  Page： 2297-2303  Publication year： May. 07, 2003 
JST Material Number： A0316A  ISSN： 1359-6454  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*silicon

About silicon

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0343283&from=J-GLOBAL&jstjournalNo=A0316A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors 
(BK13040X)

About Crystal growth of semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
過冷

About 過冷

, 
溶融シリコン

About 溶融シリコン

, 
板状結晶

About 板状結晶

, 
成長

About 成長


Return to Previous Page

TOP

BOTTOM