Morphology and electrical properties of pure and Ti-doped gas-sensitive Ga<sub>2</sub>O<sub>3</sub> film prepared by rheotaxial growth and thermal oxidation

CHEN CHIN-C; CHEN CHIU-C

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J-GLOBAL ID：200902223394081362 Reference number：04A0336696

Morphology and electrical properties of pure and Ti-doped gas-sensitive Ga₂O₃ film prepared by rheotaxial growth and thermal oxidation

レオタキシアル成長と熱酸化で作製した純及びTi添加ガス応答性Ga₂O₃膜の形態と電気特性

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Volume： 19 Issue： 4 Page： 1105-1117 Publication year： Apr. 2004
JST Material Number： D0987B ISSN： 0884-2914 CODEN： JMREEE Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Morphology and electrical properties of pure and Ti-doped gas-sensitive Ga2O3 film prepared by rheotaxial growth and thermal oxidation

Morphology and electrical properties of pure and Ti-doped gas-sensitive Ga₂O₃ film prepared by rheotaxial growth and thermal oxidation