Bulk AlN crystal growth by direct heating of the source using microwaves

ZHUANG D; EDGAR J H; HUEY H E; JIANG H X; LIN J Y; KUBALL M; MOGAL F; CHAUDHURI J; REK Z

Art

J-GLOBAL ID：200902223788556870 Reference number：04A0167385

Bulk AlN crystal growth by direct heating of the source using microwaves

マイクロ波によるソースの直接加熱によるバルクAlN結晶の成長

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=04A0167385&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0167385&from=J-GLOBAL&jstjournalNo=B0942A") }}

Author (9)： , , , , , , , ,
Material：
Volume： 262 Issue： 1/4 Page： 168-174 Publication year： Feb. 15, 2004
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0167385&from=J-GLOBAL&jstjournalNo=B0942A") }}

Crystal growth of semiconductors , Lattice defects in semiconductors , Luminescence of semiconductors

, , , , , ,

Return to Previous Page