Art
J-GLOBAL ID：200902223871949175   Reference number：04A0196397

Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

イオン照射アシストアニールによるa-SiGe/SiO2中の増強された結晶核形成
Author (4)：
TSUNODA I

About TSUNODA I

(Kyushu Univ., Fukuoka, JPN)

About Kyushu Univ., Fukuoka, JPN

, 
KENJO A

About KENJO A

(Kyushu Univ., Fukuoka, JPN)

About Kyushu Univ., Fukuoka, JPN

, 
SADOH T

About SADOH T

(Kyushu Univ., Fukuoka, JPN)

About Kyushu Univ., Fukuoka, JPN

, 
MIYAO M

About MIYAO M

(Kyushu Univ., Fukuoka, JPN)

About Kyushu Univ., Fukuoka, JPN


Material：
Applied Surface Science  (Appl Surf Sci)

About Applied Surface Science


Volume： 224  Issue： 1/4  Page： 231-234  Publication year： Mar. 15, 2004 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*silicon base alloy

About silicon base alloy

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
イオン照射

About イオン照射

, 
アシスト

About アシスト

, 
アニール

About アニール

, 
SiGe

About SiGe

, 
SiO2

About SiO2

, 
増強

About 増強

, 
結晶核形成

About 結晶核形成


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