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J-GLOBAL ID:200902225623384075   Reference number:07A1007376

MOVPE選択成長法によるSi(111)基板上のIII-V族化合物半導体ナノワイヤ成長

Author (4):
Material:
Volume: 68th  Issue:Page: 334  Publication year: Sep. 04, 2007 
JST Material Number: Y0055A  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification
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Semiconductor thin films 

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