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J-GLOBAL ID:200902226447456567   Reference number:09A0644250

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

厚いバッファ層上のGaN品質の改善による4inシリコン上のAlGaN/GaN HEMTの降伏電圧向上
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Volume: 30  Issue:Page: 587-589  Publication year: Jun. 2009 
JST Material Number: B0344B  ISSN: 0741-3106  CODEN: EDLEDZ  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors 
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