Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO<sub>2</sub> Based RRAM

LEE H.Y.; LEE H.Y.; CHEN P.S.; WU T.Y.; CHEN Y.S.; WANG C.C.; TZENG P.J.; LIN C.H.; CHEN F.; LIEN C.H.; TSAI M.-J.

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J-GLOBAL ID：200902227159201585 Reference number：09A0481028

Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO₂ Based RRAM

ロバストなHfO₂に基づくRRAMの薄いリアクティブTiバッファ層を持つ低電力で高速のバイポーラスイッチング

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Material：
Volume： 2008 Vol.1 Page： 297-300 Publication year： 2008
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor integrated circuit , Memory units , Oxide thin films

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Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO2 Based RRAM

Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO₂ Based RRAM