Art

J-GLOBAL ID：200902227330587470   Reference number：06A0503446

Origin of the n-type conductivity of InN: The role of positively charged dislocations

InNのN型伝導度の起源:正に帯電した転位の役割

Author (5)： PIPER L. F. J. (Dep. of Physics, Univ. of Warwick, Coventry, West Midlands CV4 7AL, GBR) ,  VEAL T. D. (Dep. of Physics, Univ. of Warwick, Coventry, West Midlands CV4 7AL, GBR) ,  MCCONVILLE C. F. (Dep. of Physics, Univ. of Warwick, Coventry, West Midlands CV4 7AL, GBR) ,  LU Hai (Dep. of Electrical and Computer Engineering, Cornell Univ., Ithaca, New York 14853) ,  SCHAFF W. J. (Dep. of Electrical and Computer Engineering, Cornell Univ., Ithaca, New York 14853)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 88  Issue： 25  Page： 252109-252109-3  Publication year： Jun. 19, 2006 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *indium nitride ,...

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JST classification (2)： Semiconductor thin films  (BK14040E) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (6)： InN ,  N型伝導 ,  起源 ,  帯電 ,  転位 ,  役割