Art
J-GLOBAL ID:200902227330587470   Reference number:06A0503446

Origin of the n-type conductivity of InN: The role of positively charged dislocations

InNのN型伝導度の起源:正に帯電した転位の役割
Author (5):
Material:
Volume: 88  Issue: 25  Page: 252109-252109-3  Publication year: Jun. 19, 2006 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=06A0503446&from=J-GLOBAL&jstjournalNo=H0613A") }}
JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Lattice defects in semiconductors 
Terms in the title (6):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page