Art
J-GLOBAL ID:200902228024205986   Reference number:05A0851772

Next generation energy saving FPD manufacturing technology and device.Zn O as IT O substitution material: Development of A l film.Possibility of conserve In and escape In to consider existing production line.

次世代省エネルギーFPD製造技術と装置 ITO代替材料としてのZnO:Al膜の開発-既存生産ラインを意識した省In,脱Inの可能性-
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Volume: 11  Issue: 10  Page: 67-72  Publication year: Oct. 01, 2005 
JST Material Number: L4454A  ISSN: 1341-3961  Document type: Article
Article type: 解説  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Materials of solid-state devices  ,  Oxide thin films 

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