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J-GLOBAL ID：200902230436254196   Reference number：07A0157932

Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures

HfO₂/窒化ゲルマニウム/ゲルマニウムの金属-絶縁体-半導体構造における窒化ゲルマニウム界面層の役割

Author (4)： MAEDA Tatsuro (MIRAI Project, Advanced Semiconductor Res. Center, National Inst. of Advanced Industrial Sci. and Technol. ...) ,  NISHIZAWA Masayasu (MIRAI Project, Advanced Semiconductor Res. Center, National Inst. of Advanced Industrial Sci. and Technol. ...) ,  MORITA Yukinori (MIRAI Project, Advanced Semiconductor Res. Center, National Inst. of Advanced Industrial Sci. and Technol. ...) ,  TAKAGI Shinichi (MIRAI Project, ASRC-AIST, AIST Tsukuba West 7, Tsukuba, Ibaraki 305-8569, Japan and The Univ. of Tokyo, 7-3-1 Hongo ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 90  Issue： 7  Page： 072911-072911-3  Publication year： Feb. 12, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： MOSFET ,...
Semi thesaurus term： plasma treatment ,...

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JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Thin films of other inorganic compounds  (BK14060A)

Terms in the title (6)： HfO2 ,  窒化ゲルマニウム ,  ゲルマニウム ,  金属-絶縁体-半導体構造 ,  界面層 ,  役割