Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices

CAMPBELL J. P.; LENAHAN P. M.; KRISHNAN A. T.; KRISHNAN S.

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J-GLOBAL ID：200902230753807672 Reference number：07A0992923

Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices

プラズマ窒化素子の負バイアス温度不安定性に関与する原子規模の欠陥構造の同定

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Volume： 91 Issue： 13 Page： 133507-133507-3 Publication year： Sep. 24, 2007
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Lattice defects in semiconductors

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