Art

J-GLOBAL ID：200902231116097510   Reference number：04A0382538

Influence of moisture on device characteristics of polythiophene-based field-effect transistors

ポリチオフェンをベースにした電界効果トランジスタのデバイス特性に及ぼす湿気の影響

Author (7)： HOSHINO S (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YOSHIDA M (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  UEMURA S (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KODZASA T (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TAKADA N (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KAMATA T (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YASE K (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 95  Issue： 9  Page： 5088-5093  Publication year： May. 01, 2004 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *polyalkylthiophene ,...
Semi thesaurus term： P3HT

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JST classification (1)： Transistors  (NC03070N)

Terms in the title (4)： ポリチオフェン ,  電界効果トランジスタ ,  デバイス特性 ,  湿気