Effects of internal electrical field on transient absorption in In<sub>x</sub>Ga<sub>1-x</sub>N thin layers and quantum wells with different thickness by pump and probe spectroscopy.

OMAE K; KAWAKAMI Y; FUJITA S; NARUKAWA Y; MUKAI T

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J-GLOBAL ID：200902232521356138 Reference number：03A0755748

Effects of internal electrical field on transient absorption in In_xGa_1-xN thin layers and quantum wells with different thickness by pump and probe spectroscopy.

様々な厚みのIn_xGa_1-xN薄層及び量子井戸の過渡吸収に対する内部電場効果のポンプ-プローブ分光法による研究

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Author (5)： , , , ,
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Volume： 68 Issue： 8 Page： 085303.1-085303.5 Publication year： Aug. 2003
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Visible and ultraviolet spectra of semiconductors

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Effects of internal electrical field on transient absorption in InxGa1-xN thin layers and quantum wells with different thickness by pump and probe spectroscopy.

Effects of internal electrical field on transient absorption in In_xGa_1-xN thin layers and quantum wells with different thickness by pump and probe spectroscopy.