Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film.

REECE T J; DUCHARME S; SOROKIN A V; POULSEN M

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J-GLOBAL ID：200902232530751635 Reference number：03A0062933

Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film.

強誘電性重合体のLangmuir-Blodgett膜を用いた不揮発性記憶素子

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Material：
Volume： 82 Issue： 1 Page： 142-144 Publication year： Jan. 06, 2003
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Semiconductor integrated circuit

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