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J-GLOBAL ID：200902235420940253
Reference number：03A0184224
Effects of Annealing on Photoluminescence of ZnO Thin Film Prepared by Vapor Phase Growth.
気相成長法で作製したZnO薄膜の光ルミネセンスに及ぼすアニーリングの効果
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Author (2)：
,
Material：
Volume：
42
Issue：
2A
Page：
602-606
Publication year：
Feb. 15, 2003
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Luminescence of semiconductors
Reference (27)：
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MANG, A. Solid State Commun. 1995, 94, 251
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VANHEUSDEN, K. J. Lumin. 1997, 75, 11
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STUDENIKIN, S. A. J. Appl. Phys. 1998, 84, 2287
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KIM, K. H. J. Appl. Phys. 1997, 81, 7764
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JIN, B. J. Thin, Solid Films. 2000, 366, 107
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